Surface and Buffer Trap Signatures in Fe-doped AlGaN/GaN HEMT Identified by LF S-parameter TCAD Simulations

Type

Authors

Nallatamby J.-C.; Silva Dos Santos J.A.; Raja P.V.; Bouslama M.; Sommet R.

Source title

2022 17th European Microwave Integrated Circuits Conference, EuMIC 2022

DOI

10.23919/EuMIC54520.2022.9923517

Publication Year