We are happy to share our first joint collaborative journal publication between IITDH,XLIM Laboratory France, & UMS(United Monolithic Semiconductors),entitled “Fe-doping starting depth impacts on static and transient characteristics of AlGaN/GaN HEMTs”.

We are happy to share our first joint collaborative journal publication between IIT Dharwad, XLIM Laboratory France, and UMS - United Monolithic Semiconductors, entitled “Fe-doping starting depth impacts on static and transient characteristics of AlGaN/GaN HEMTs”. This work is carried out by Ms. Vaidehi Painter with the supervision of Prof. P. Vigneshwara Raja. The paper can be downloaded from the shared link: https://lnkd.in/dSQt9B2s