Estimation of Trapping Induced Dynamic Reduction in 2DEG Density of GaN-Based HEMTs by Gate-Lag DCT Technique

Type

Authors

Raja P.V.; Dupouy E.; Bouslama M.; Sommet R.; Nallatamby J.-C.

Source title

IEEE Transactions on Electron Devices

DOI

10.1109/TED.2022.3193650

Publication Year