Electrical characteristics and trap signatures for Schottky barrier diodes on 4H-SiC, GaN-on-GaN, AlGaN/GaN epitaxial substrates

Kumari S.; Singh R.; Kumar S.; Murty N.V.L.N.; Planson D.; Raynaud C.; Sonneville C.; Morel H.; Phung L.V.; Ngo T.H.; De Mierry P.; Frayssinet E.; Cordier Y.; Maher H.; Sommet R.; Nallatamby J.-C.; Raja P.V.