Inspection of Trapping and Detrapping Dynamics in Fe- and C-doped GaN-based RF HEMTs by Filling Pulse-Dependent DCT Spectroscopy

Type

Authors

Raja P.V.; Painter V.V.; Sommet R.; Nallatamby J.-C.

Source title

IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024

DOI

10.1109/EDTM58488.2024.10511773

Publication Year