Estimation of Zero-Field Activation Energy for Traps in Fe- and C-Doped GaN-Based HEMTs

Type

Authors

Raja P.V.; Painter V.V.; Dupouy E.; Sommet R.; Nallatamby J.-C.

Source title

IEEE Transactions on Electron Devices

DOI

10.1109/TED.2023.3302280

Publication Year