Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes

Type
Authors
Raja P.V.; Raynaud C.; Sonneville C.; Eric N'Dohi A.J.; Morel H.; Phung L.V.; Ngo T.H.; De Mierry P.; Frayssinet E.; Maher H.; Tasselli J.; Isoird K.; Morancho F.; Cordier Y.; Planson D.
Source title
Microelectronics Journal
DOI
10.1016/j.mejo.2022.105575
Publication Year